Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric
نویسندگان
چکیده
We present results on small-molecule pand n-type organic semiconductors in combination with the highly water repellent fluoropolymer CytopTM as the gate dielectric. Using pentacene and N,N -ditridecylperylene-3,4,9,10-tetracarboxylicdiimide PTCDI-C13 , we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined pand n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility 0.2 cm2 /V s . Particularly PTCDI-C13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade. © 2009 American Institute of Physics. DOI: 10.1063/1.3077192
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